note: all specifications are subject to change without notification. scd's for these devices should be re viewed by ssdi prior to release. data sheet #: ft0024a doc solid state devices, inc. 14830 valley view blvd * la mirada, ca 90638 phone: (562) 404-7855 * fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com designer?s data sheet part number / ordering information 1 / sff7002ka2 __ __ screening 2 / __ = not screened tx = tx level txv = txv level s = s level package 3 / gw = gullwing SFF7002KA2GW dual microminiature package 300 ma 60 volts 2 ? dual n-channel logic level trenchfet mosfet features: ? low on-resistance, < 2 ohm ? low input capacitance, < 25 pf ? low threshold voltage, < 2 v ? fast switching, < 25 ns ? tx, txv, and s-level screening available. consult factory maximum ratings symbol value units gate ? source voltage v gs 20 volts drain to source voltage v ds 60 volts continuous drain current t a = 25 o c t a = 100 o c i d 300 190 ma instantaneous (pulsed) drain current, tj li mited i dm 800 ma power dissipation @ t a = 25 o c per device total p d 350 500 mw mw maximum thermal resistance, junction to pcb r j-pcb 5 / 250 oc/w operating & storage temperature t op & t stg -65 to +200 oc package outline: gullwing (gw) pin 1 pin 4 pin 6 pin 3 pin 1 pin 4 pin 6 pin 3 ssdi .193 .015.010 .040 .010 .350 .010 6x r.010 .033 3x .015 .010 .107 .130 2x .050 (=.100) 6x .030 .107 .034 .125 6x .010 .025 5x r.018 .015 .035
note: all specifications are subject to change without notification. scd's for these devices should be re viewed by ssdi prior to release. data sheet #: ft0024a doc electrical characteristics 4 / symbol min typ max units gate ? source breakdown voltage i g = 10 a, v ds = 0 v bv dss 60 70 ?? volts gate to source threshold voltage v ds = v gs , i d = 0.25 ma v gs(th) 1.0 2.0 2.5 volts gate to source leakage current v gs = +/-20 v, v ds = 0 v v gs = +/-10 v, v ds = 0 v v gs = +/-5 v, v ds = 0 v v gs = +/-10 v, v ds = 0 v, t a = 85oc i gss 0.0005 10 150 100 1000 ua na na na zero gate voltage drain current v ds = 50 v, v gs = 0 v v ds = 60 v, v gs = 0 v v ds = 50 v, v gs = 0 v, t a = 85oc v ds = 60 v, v gs = 0 v,t a = 125oc i dss 0.4 10 1 100 500 na ua na ua on-state drain current v ds = 7.5 v, v gs = 10 v v ds = 4.5 v, v gs = 10 v v ds = 25 v, v gs = 10 v i d(on) 800 500 - - - 2.1 ma ma a drain ? source on-resistance i d = 500 ma, v gs = 10 v i d = 200 ma, v gs = 10 v i d = 50 ma, v gs = 5 v r ds(on) 2.8 4.0 3.5 3.5 - - ? ? ? transconductance i d = 200 ma, v ds = 10 v g fs 100 ms body diode forward voltage i s = 200 ma, v gs = 0 v v sd 1.3 v total gate charge v ds = 10 v, v gs = 4.5 v, i d = 250 ma q g - 0.6 nc input capacitance v ds = 25 v, v gs = 0 v, f = 1 mhz c iss ?? 30 - pf output capacitance v ds = 25 v, v gs = 0 v, f = 1 mhz c oss ?? 6 - pf reverse transfer capacitance v ds = 25 v, v gs = 0 v, f = 1 mhz c rss ?? 2.5 - pf turn-on time t on ?? 10 25 ns turn-off time v dd = 30 v, i d = 200 ma, r l = 150 ? , r g = 10 ? , v g = 10 v t off ?? 13 35 ns notes: * pulse test: pulse width = 100 sec, duty cycle = 2% 1 / for ordering information, price, and availability contact factory. 2 / screening per mil-prf-19500 3 / for package outlines contact factory. 4 / unless otherwise specified, all electrical characteristics @25oc 5 / mounted on fr1 pcb available part numbers: SFF7002KA2GW pin assignment package pin 1 pin 2 pin 3 pin 4 pin 5 pin 6 gullwing drain gate source drain gate source solid state devices, inc. 14830 valley view blvd * la mirada, ca 90638 phone: (562) 404-7855 * fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFF7002KA2GW
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